RJP63K2 Integrated Circuitl Plasma Commonly Used Field Effect Tube TO-263 New Electronic Components

Type : MOSFET, IGBT Transistor

Operating Temperature : -55°C ~ 150°C (TJ)

Series : SCR 500V 12A TO220AB BT151-500R BT151

Mounting Type : /, Surface Mount

Description : /

Model Number : RJP63K2

Place of Origin : Angola

Brand Name : original

D/C : 20+

Package Type : Surface Mount

Application : -

Supplier Type : Other

Cross Reference : standard

Media Available : Other

Brand : MOS

Current - Collector (Ic) (Max) : -

Voltage - Collector Emitter Breakdown (Max) : -

Vce Saturation (Max) @ Ib, Ic : -

Current - Collector Cutoff (Max) : -

DC Current Gain (hFE) (Min) @ Ic, Vce : -

Power - Max : -

Frequency - Transition : -

Package / Case : /

Resistor - Base (R1) : -

Resistor - Emitter Base (R2) : -

FET Type : -

FET Feature : Standard

Drain to Source Voltage (Vdss) : -

Current - Continuous Drain (Id) @ 25°C : -

Rds On (Max) @ Id, Vgs : -

Vgs(th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : -

Input Capacitance (Ciss) (Max) @ Vds : -

Frequency : -

Current Rating (Amps) : -

Noise Figure : -

Power - Output : -

Voltage - Rated : -

Drive Voltage (Max Rds On, Min Rds On) : -

Vgs (Max) : -

IGBT Type : -

Configuration : Single

Vce(on) (Max) @ Vge, Ic : -

Input Capacitance (Cies) @ Vce : -

Input : -

NTC Thermistor : -

Voltage - Breakdown (V(BR)GSS) : -

Current - Drain (Idss) @ Vds (Vgs=0) : -

Current Drain (Id) - Max : -

Voltage - Cutoff (VGS off) @ Id : -

Resistance - RDS(On) : -

Voltage : -

Voltage - Output : -

Voltage - Offset (Vt) : -

Current - Gate to Anode Leakage (Igao) : -

Current - Valley (Iv) : -

Current - Peak : -

Applications : -

Transistor Type : mrf150 rf power transistor

Packing : Reel Box Carton

Packaging Details : ESD/Vacuum/Foam/Cartons

Port : shenzhen

Supply Ability : 88888 Piece/Pieces per Month

MOQ : 50 pieces

Price : $0.28/pieces >=50 pieces