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Microwave RF Power Transistor HF/VHF/UHF MOSFET MRF6S21100

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Microwave RF Power Transistor HF/VHF/UHF MOSFET MRF6S21100

Name: Microwave RF Power Transistor HFVHFUHF MOSFET MRF6S21100
Brand: original
Price: 20.00 USD

Quality Microwave RF Power Transistor HF/VHF/UHF MOSFET MRF6S21100 wholesale

Type : RF TRANSISTOR, IGBT Transistor

Operating Temperature : standard

Series : standard

Mounting Type : /, Surface Mount

Description : /

Model Number : Mrf6s21100

Place of Origin : Japan

Brand Name : original

D/C : latest

Package Type : Surface Mount

Application : High Frequency

Supplier Type : Agency, Retailer

Cross Reference : standard

Media Available : datasheet

Brand : RF Power transistor

Current - Collector (Ic) (Max) : standard

Voltage - Collector Emitter Breakdown (Max) : standard

Vce Saturation (Max) @ Ib, Ic : standard

Current - Collector Cutoff (Max) : standard

DC Current Gain (hFE) (Min) @ Ic, Vce : standard

Power - Max : standard

Frequency - Transition : standard

Package / Case : standard

Resistor - Base (R1) : standard

Resistor - Emitter Base (R2) : standard

FET Type : standard

FET Feature : Schottky Diode (Isolated)

Drain to Source Voltage (Vdss) : standard

Current - Continuous Drain (Id) @ 25°C : standard

Rds On (Max) @ Id, Vgs : standard

Vgs(th) (Max) @ Id : standard

Gate Charge (Qg) (Max) @ Vgs : standard

Input Capacitance (Ciss) (Max) @ Vds : standard

Frequency : standard

Current Rating (Amps) : standard

Noise Figure : standard

Power - Output : standard

Voltage - Rated : standard

Drive Voltage (Max Rds On, Min Rds On) : standard

Vgs (Max) : standard

IGBT Type : standard

Configuration : Half Bridge

Vce(on) (Max) @ Vge, Ic : standard

Input Capacitance (Cies) @ Vce : standard

Input : standard

NTC Thermistor : standard

Voltage - Breakdown (V(BR)GSS) : standard

Current - Drain (Idss) @ Vds (Vgs=0) : standard

Current Drain (Id) - Max : standard

Voltage - Cutoff (VGS off) @ Id : standard

Resistance - RDS(On) : standard

Voltage : standard

Voltage - Output : standard

Voltage - Offset (Vt) : standard

Current - Gate to Anode Leakage (Igao) : standard

Current - Valley (Iv) : standard

Current - Peak : standard

Applications : PCB

Transistor Type : mrf150 rf power transistor

condition : original and new MRF6S21100

Packaging Details : Microwave RF power transistor HF/VHF/UHF MOSFET MRF6S21100

Port : SZ

Supply Ability : 10000 Piece/Pieces per Week

Price : $20.00/pieces >=1 pieces

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Shenzhen Qingfengyuan Technology Co., Ltd.

Welcome to our company! We're your all-in-one source for electronic components(BOM). Our expertise lies in providing a wide variety of electronic components to suit your diverse requirements. We offerings: - Semiconductors: microcontrollers, transistors, diodes, integrated circuits (ICs) - Passive Components: resistors, capacitors, inductors, connectors - Electromechanical Components: switches, relays, sensor actuators - Power Supplies: voltage regulators, power converters, battery management - Optoelectronics: LEDs, lasers, photodiodes, optical sensors - RF and Wireless Components: RF modules, antennas, wireless communication - Sensors: temperature sensors, motion sensors, environmental sensors.

Microwave RF Power Transistor HF/VHF/UHF MOSFET MRF6S21100

Type: Integrated circuits Electronic components

DC:22+

MOQ:1pc

Package: Standard

The range of functional chips is broad and covers many different application areas, such as communications, image processing, sensor control, audio processing, energy management, and more.

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Microwave RF Power Transistor HF/VHF/UHF MOSFET MRF6S21100 Images

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